Search results for "infrared detector"

Crystal growth of Hg1−xMnxSe for infrared detection

2007

In this work, we report on the successfully growing Hg"1"-"xMn"xSe bulk crystals using a mixed, travelling heater method and Bridgman method, two-step procedure. Firstly, and with the aim of reducing Hg high pressure related to the high temperature synthesis reaction between the components in elemental form, HgSe crystals were synthesized and grown by the cold travelling heater method. Secondly, previously sublimated Mn and Se were incorporated to complete the desired composition. Then, the Bridgman growth was carried out by heating the alloy at a temperature of about 880^oC and lowering it at rate of 1mm/h through a gradient of 25^oC/cm. The Hg"1"-"xMn"xSe crystals were characterized by sc…

Monitoring soft tissue coagulation by optical spectroscopy

2017

Laser tissue welding (LTW) or laser tissue soldering (LTS) is investigated since many years for treatment of incisions, wound closure and anastomosis of vessels [1, 2]. Depending on the process, a certain temperature in the range between 65 °C to 85 °C must be reached and held for a few seconds. Care has to be taken not to overheat the tissue, otherwise necrosis or tissue carbonization may occur and will impair wound healing. Usually the temperature is monitored during the process to control the laser power [3]. This requires either bulky equipment or expensive and fragile infrared fibers to feed the temperature signal to an infrared detector. Alternatively, changes in tissue morphology can…

Improvement of building wall surface temperature measurements by infrared thermography

2005

By using quantitative thermal scanning of building surface structures, it is possible to access the temperature field. For further calculation of the heat flux exchanged by these structures with the environment, one must quantify as finely as possible the temperature field on the bodies surfaces. For this purpose we have to take into account that real bodies are not black, which implies that a part of the ambient radiation received by the infrared camera detectors is reflected radiation. In this paper, we present a method to quantify the reflected flux by using an infrared mirror, which allows large surface temperature measurements by infrared thermography under near-ambient conditions with…

GRAPHENE-BASED TRANSISTORS AND DETECTORS: FABRICATION AND CHARACTERIZATION

Carbon and carbon-based systems have always attracted great attention thanks to the almost unlimited different structures they can be arranged in and the equally varied physical properties they own. These characteristics are mainly related to the flexibility of carbon bonding, which makes carbon an extremely versatile “building block” material. Most of the typical properties of each carbon-based system are mainly associated with the dimensionality of the structure itself. In this framework, graphene, the first two-dimensional atomic crystal available to the scientific community, has revealed to play a key role in terms of fundamental physics and potential applications, despite its short sto…

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

2016

International audience; An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider r…

Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

2018

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.